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| SHINDENGEN Schottky Rectifiers (SBD) Dual DE5SC4M 40V 5A FEATURES *oe SMT *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe High current capacity with Small Package APPLICATION *oe Switching OUTLINE DIMENSIONS Case : E-pack Unit : mm power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit -40*150 *Z Storage TemperatureTstg Tj 150 *Z Operating Junction Temperature V Maximum Reverse Voltage RM 40 V VReverse width 0.5ms, duty 1/40 45 V Repetitive Peak SurgeRRSM Voltage Pulse IO 50Hz sine Average Rectified Forward Currentwave, R-load, Rating for each diode Io/2, Ta=2 3 A 5 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=1 IFSM Peak Surge Forward Current sine wave, Non-repetitive 1 cycle peak value, Tj=12 50Hz 80 A P Reverse width 330 W Repetitive Peak SurgeRRSM Power10Es, Rating of per diode, Tj=25*Z Pulse *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit V I=2.5A, Pulse measurement, Rating of Max.0.55 Forward Voltage FF per diode V IR V=VM Pulse measurement, Rating of perMax.3.5 A , diode m Reverse Current RR Junction Capacitance Cj f=1MHz, V Rating of per diode R =10V, Typ.150 F p Max.12 *Z/W Thermal Resistance AEjc junction to case AEja junction to ambient, On alumina substrate Max.55 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DE5SC4M Forward Voltage 10 Forward Current IF [A] 1 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] DE5SC4M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] DE5SC4M 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Reverse Current IR [mA] 10 Tc=125C [TYP] Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] DE5SC4M 12 Reverse Power Dissipation Reverse Power Dissipation PR [W] 10 8 DC D=0.05 0.1 0.2 0.3 6 0.5 4 2 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T DE5SC4M 6 Forward Power Dissipation Forward Power Dissipation PF [W] 5 DC D=0.8 4 0.3 SIN 0.5 3 0.05 2 0.2 0.1 1 0 0 1 2 3 4 5 6 7 8 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T DE5SC4M 10 Derating Curve Average Rectified Forward Current IO [A] 8 DC D=0.8 6 0.5 SIN 0.3 4 0.2 0.1 2 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V 0 0 IO VR tp D=tp /T T DE5SC4M 6 Derating Curve Alumina substrate Average Rectified Forward Current IO [A] 5 DC D=0.8 Alumina base Soldering land (leads) 1.5mm x 2.5mm Soldering land (heatsink) 7mm Conductor layer 20m Substrate thickness 0.64mm 4 0.5 3 0.3 2 0.2 1 0.1 SIN 0 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T DE5SC4M 150 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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